- IOPS 4K read/Write: 100k/90k
- Max. Read Speed: 550MB/s
- Max. Write Speed: 520MB/s
- What is 3D V-NAND and how does it differ from existing technology?
Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilizing a smaller footprint.
- Get into the fast lane with the improved RAPID mode
- Compute longer with improved energy efficiencybacked by 3D V-NAND
- Secure valuable data through advancedAES 256 encryption
|Official Release Date||Jul 02, 2014|
|Genre||Solid-State Drive (Internal)|
|Product Measures||10cm x 7cm x 0.68cm|